STS9D8NH3LL
MOSFET 2N-CH 30V 8A/9A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STS9D8NH3LL is a dual N-channel STripFET™ MOSFET array designed for demanding applications. This device features a 30V breakdown voltage with continuous drain current ratings of 8A and 9A per channel at 25°C. Optimized for efficiency, it offers a low Rds(on) of 22mOhm maximum at 4A, 10V, and a logic-level gate for compatibility with lower voltage drive signals. The STS9D8NH3LL boasts a gate charge of 10nC maximum at 4.5V and an input capacitance of 857pF maximum at 25V. Packaged in an 8-SOIC surface mount configuration, it supports a maximum power dissipation of 2W and operates across an extended temperature range up to 150°C. This component is commonly utilized in automotive, industrial automation, and power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 9A |
| Input Capacitance (Ciss) (Max) @ Vds | 857pF @ 25V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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