STS8DNF3LL
MOSFET 2N-CH 30V 8A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STS8DNF3LL is a dual N-channel Power MOSFET from the STripFET™ II series. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 8A at 25°C. Designed for logic-level gate drive, it offers a low Rds(on) of 20mOhm maximum at 4A, 10V. Key parameters include a gate charge (Qg) of 17nC maximum at 5V and an input capacitance (Ciss) of 800pF maximum at 25V. The device supports a maximum power dissipation of 1.6W and operates at junction temperatures up to 150°C. The STS8DNF3LL is supplied in an 8-SOIC package, suitable for surface mounting. This component finds application in automotive and industrial power management systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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