STS8C5H30L
MOSFET N/P-CH 30V 8A/5.4A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STS8C5H30L, a dual MOSFET array from the STripFET™ III series, features N-channel and P-channel configurations within an 8-SOIC package. This device offers a 30V drain-to-source voltage rating and supports continuous drain currents of 8A for the N-channel and 5.4A for the P-channel at 25°C. Optimized for logic-level gate drive, it exhibits a low Rds(on) of 22mOhm at 4A and 10V, with a maximum power dissipation of 2W. Typical applications include power management, battery charging, and motor control in automotive and industrial sectors. The STS8C5H30L is supplied on tape and reel for efficient automated assembly.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 5.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 857pF @ 25V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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