STS7C4F30L
MOSFET N/P-CH 30V 7A/4A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STripFET™ STS7C4F30L is a complementary N-channel and P-channel MOSFET array in an 8-SOIC package. This device features a 30V drain-source voltage rating and continuous drain currents of 7A for the N-channel and 4A for the P-channel. Optimized for efficiency, it offers a low Rds(on) of 22mOhm at 3.5A and 10V for the N-channel, and a comparable value for the P-channel. The logic-level gate ensures compatibility with lower voltage drive signals. With a maximum junction temperature of 150°C and a power dissipation of 2W, this MOSFET array is suitable for applications in automotive, industrial power control, and consumer electronics. The STS7C4F30L is supplied on tape and reel for automated assembly.
Additional Information
Series: STripFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A, 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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