STS5DP3LLH6
MOSFET 2P-CH 30V 5A 8SOManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STS5DP3LLH6 is a 2 P-Channel MOSFET array within the DeepGATE™, STripFET™ H6 series. This 8-SOIC device offers a 30V drain-to-source voltage and a continuous drain current of 5A at 25°C ambient. Featuring logic-level gate drive capability, it operates effectively with a 4.5V gate drive. The STS5DP3LLH6 exhibits a maximum Rds(on) of 56mOhm at 2.5A and 10V Vgs, with a low gate charge of 6nC at 4.5V. Its maximum power dissipation is 2.7W, and it operates within an ambient temperature range up to 150°C. This MOSFET array is commonly utilized in automotive and industrial applications requiring efficient power switching. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: DeepGATE™, STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 639pF @ 25V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
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