STS4DNF30L
MOSFET 2N-CH 30V 4A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STS4DNF30L is a dual N-channel STripFET™ MOSFET array housed in an 8-SOIC package. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 4A at 25°C. The device is designed with logic level gate drive capability, offering a low Rds On of 50mOhm maximum at 2A, 10V. Key parameters include a maximum Gate Charge (Qg) of 9nC at 10V and an input capacitance (Ciss) of 330pF maximum at 25V. With a maximum power dissipation of 2W, this surface mount device operates across a temperature range of -55°C to 150°C. The STS4DNF30L is suitable for applications in automotive and industrial power management. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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