STS3C2F100
MOSFET N/P-CH 100V 3A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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The STMicroelectronics STS3C2F100 is a dual MOSFET array featuring N-channel and P-channel configurations within an 8-SOIC package. This STripFET™ device offers a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 3A at 25°C. Its low Rds(on) of 145mOhm at 1.5A and 10V, coupled with a logic level gate feature, makes it suitable for various power management applications. The component has a maximum power dissipation of 2W and an operating junction temperature of 150°C. Key parameters include a gate charge (Qg) of 20nC at 10V and input capacitance (Ciss) of 460pF at 25V. This device is commonly utilized in automotive and industrial power control systems. It is supplied in tape and reel packaging.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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