STS2DNF30L
MOSFET 2N-CH 30V 3A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STS2DNF30L is a dual N-channel STripFET™ MOSFET array in an 8-SOIC package. This device offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 3A. Featuring logic level gate operation, it achieves a typical Rds(On) of 110mOhm at 1A and 10V. The STS2DNF30L has a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 4.5nC (max) at 10V and input capacitance (Ciss) of 121pF (max) at 25V. Supplied in Tape & Reel (TR) packaging, this MOSFET array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 121pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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