STS1DN45K3
MOSFET 2N-CH 450V 0.5A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics SuperMESH3™ STS1DN45K3 is a dual N-channel MOSFET array designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 450V and a continuous drain current (Id) of 500mA at 25°C, with a maximum power dissipation of 1.3W. The STS1DN45K3 offers a typical gate charge (Qg) of 6nC at 10V and input capacitance (Ciss) of 150pF at 25V. On-resistance (Rds On) is specified at a maximum of 3.8 Ohms at 500mA and 10V. The MOSFET array is housed in an 8-SOIC package for surface mounting and operates within a junction temperature range of -55°C to 150°C. This component is suitable for use in power supply circuits, lighting, and general-purpose high-voltage switching applications. The STS1DN45K3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 450V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
| Rds On (Max) @ Id, Vgs | 3.8Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | 8-SOIC |