STS10DN3LH5
MOSFET 2N-CH 30V 10A 8SOICManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STS10DN3LH5 is a dual N-channel MOSFET array from the STripFET™ V series. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C. The STS10DN3LH5 offers a low Rds(on) of 21mOhm at 5A and 10V, along with a logic level gate for enhanced compatibility. With a maximum power dissipation of 2.5W, it is suitable for applications requiring efficient switching. This component is provided in an 8-SOIC (0.154", 3.90mm Width) package, supplied on tape and reel. Its typical applications span automotive and industrial power management systems. The device operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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