STL65DN3LLH5
MOSFET 2N-CH 30V 65A POWERFLATManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STL65DN3LLH5 is a 2 N-channel MOSFET array from the STripFET™ V series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 65A at 25°C. With a low Rds(on) of 6.5mOhm at 9.5A and 10V, and a logic level gate, it is optimized for efficient power switching. The device boasts a total power dissipation of 60W and a maximum gate charge of 12nC at 4.5V. Input capacitance (Ciss) is a maximum of 1500pF at 25V. The STL65DN3LLH5 is housed in an 8-PowerVDFN package, specifically a Surface Mount PowerFlat™ (5x6), supplied on tape and reel. This component is suitable for applications in automotive and industrial power management systems. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 60W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 65A |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 9.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
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