STL60N32N3LL
MOSFET 2N-CH 30V 32A/60A PWRFLATManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The STMicroelectronics STripFET™ STL60N32N3LL is an asymmetrical dual N-channel MOSFET array designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and offers continuous drain currents of 32A and 60A at 25°C, with respective power dissipations of 23W and 50W. Optimized for logic-level gate drive, it exhibits a low Rds(on) of 9.2mOhm at 6.8A and 10V, and a low gate charge of 6.6nC at 4.5V. The input capacitance (Ciss) is 950pF at 25V. Packaged in an 8-PowerVDFN (PowerFlat™ 5x6) for surface mounting, this MOSFET array operates across a temperature range of -55°C to 150°C. It is suitable for use in automotive, industrial power supplies, and DC-DC conversion systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 23W, 50W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 32A, 60A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 25V |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 6.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 1µA |
| Supplier Device Package | PowerFlat™ (5x6) |