STL50DN6F7
MOSFET 2N-CH 60V 57A POWERFLATManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STripFET™ STL50DN6F7 is a dual N-channel MOSFET array designed for power management applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 57A at 25°C (Tc). The low on-resistance of 11mOhm is achieved at 7.5A and 10V Vgs. With a maximum power dissipation of 62.5W, this MOSFET array is suitable for high-power switching and conversion tasks. Key parameters include a gate charge of 17nC (max) at 10V and an input capacitance of 1035pF (max) at 30V. The STL50DN6F7 operates across a temperature range of -55°C to 175°C and is packaged in an 8-PowerVDFN (PowerFlat™ 5x6) format, supplied on tape and reel. Applications include automotive, industrial power supplies, and battery management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 62.5W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1035pF @ 30V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
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