STL36DN6F7
MOSFET 2N-CH 60V 33A POWERFLATManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STL36DN6F7 is a STripFET™ series N-channel Power MOSFET array featuring a 60V drain-source voltage and 33A continuous drain current at 25°C (Tc). This dual N-channel device is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), suitable for surface mounting. With a maximum power dissipation of 58W and a low Rds On of 27mOhm at 4.5A and 10V, it offers efficient power switching. Key parameters include a gate charge (Qg) of 8nC (max) at 10V and input capacitance (Ciss) of 420pF (max) at 30V. The device operates across a wide temperature range from -55°C to 175°C (TJ). This component is commonly utilized in industrial and automotive applications requiring high-density power management.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 58W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 30V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
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