STL20DN10F7
MOSFET 2N-CH 100V 20A POWERFLATManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
Quality Control: Learn More
STMicroelectronics STL20DN10F7 is a 2 N-Channel MOSFET array from the DeepGATE™, STripFET™ VII series. This device offers a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. The STL20DN10F7 features a low on-resistance of 67mOhm maximum at 2.5A, 10V, and a maximum power dissipation of 62.5W. Key parameters include a gate charge (Qg) of 7.8nC at 10V and input capacitance (Ciss) of 408pF at 50V. The threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA. This component is housed in an 8-PowerVDFN package, specifically the STMicroelectronics PowerFlat™ (5x6) footprint, and is supplied on tape and reel. It is suitable for applications requiring efficient switching and power handling in automotive and industrial sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 62.5W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 408pF @ 50V |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
Request a Quote
Clients Also Buy
STD100N10F7
MOSFET N CH 100V 80A DPAK
STD25N10F7
MOSFET N-CH 100V 25A DPAK
STL7N10F7
MOSFET N-CH 100V POWERFLAT
