STL13DP10F6
MOSFET 2P-CH 100V 13A POWERFLATManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics STL13DP10F6 is a DeepGATE™, STripFET™ VI series automotive-grade Power MOSFET designed for high-efficiency power switching applications. This device features a 2 P-Channel configuration, delivering a continuous drain current of 13A at 25°C and a drain-to-source voltage (Vdss) of 100V. The STL13DP10F6 offers a low Rds(on) of 180mOhm maximum at 1.7A and 10V Vgs, coupled with a logic level gate for enhanced drive flexibility. Key parameters include a maximum power dissipation of 62.5W and a typical input capacitance (Ciss) of 864pF. Packaged in an 8-PowerVDFN (PowerFlat™ 5x6) for efficient thermal management and surface mounting, this component is suitable for automotive and industrial power management systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 62.5W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 13A |
| Input Capacitance (Ciss) (Max) @ Vds | 864pF @ 25V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
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