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STL105DN4LF7AG

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STL105DN4LF7AG

MOSFET 2N-CH 40V 40A POWERFLAT

Manufacturer: STMicroelectronics

Categories: FET, MOSFET Arrays

Quality Control: Learn More

STMicroelectronics STripFET™ F7 series N-channel MOSFET array, part number STL105DN4LF7AG, offers a 40V drain-source voltage (Vdss) and 40A continuous drain current (Id) at 25°C (Tc). This AEC-Q101 qualified component features a maximum power dissipation of 94W and a low on-resistance of 4.5mOhm at 12A, 10V (Vgs). The device is supplied in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) footprint, for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 27.5nC at 10V and a maximum input capacitance (Ciss) of 1594pF at 25V. With an operating temperature range of -55°C to 175°C (TJ), this automotive-grade MOSFET array is suitable for demanding applications in automotive and industrial power management systems. The component is packaged on tape and reel (TR).

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max94W
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1594pF @ 25V
Rds On (Max) @ Id, Vgs4.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs27.5nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
QualificationAEC-Q101

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