M1P45M12W2-1LA
MOSFET 6N-CH 1200V ACEPACK DMTManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
Quality Control: Learn More
STMicroelectronics M1P45M12W2-1LA is a 6-channel Silicon Carbide (SiC) MOSFET array within the ECOPACK® series. This component features a Drain-Source Voltage (Vdss) of 1200V (1.2kV) and a continuous Drain Current (Id) of 30A at 25°C (Tc). The Rds On is specified at a maximum of 60.5mOhm at 20A and 18V. With a Gate Charge (Qg) of 100nC at 18V and an Input Capacitance (Ciss) of 2086pF at 800V, this device is suitable for demanding applications. The M1P45M12W2-1LA is housed in a 32-PowerDIP Module (ACEPACK DMT-32) for through-hole mounting and operates across a temperature range of -40°C to 175°C. Its advanced SiC technology makes it ideal for use in high-power conversion systems, electric vehicles, and industrial power supplies.
Additional Information
Series: ECOPACK®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-PowerDIP Module (1.264"", 32.10mm) |
| Mounting Type | Through Hole |
| Configuration | 6 N-Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2086pF @ 800V |
| Rds On (Max) @ Id, Vgs | 60.5mOhm @ 20A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | ACEPACK DMT-32 |
| Grade | - |
| Qualification | - |
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