M1F45M12W2-1LA
MOSFET 4N-CH 1200V ACEPACK DMTManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics' M1F45M12W2-1LA is a silicon carbide (SiC) MOSFET array from the ECOPACK® series. This component features four N-channel MOSFETs with a Drain-Source Voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 30A at 25°C (Tc). The Rds On is specified at a maximum of 64mOhm at 20A, 18V. The device exhibits a Gate Charge (Qg) of 100nC at 18V and an input capacitance (Ciss) of 2086pF at 800V. It operates within a temperature range of -40°C to 175°C (TJ). The M1F45M12W2-1LA is housed in an ACEPACK DMT-32 package, a 32-pin module designed for through-hole mounting. This power semiconductor is utilized in applications such as electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: ECOPACK®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-PowerDIP Module (1.264"", 32.10mm) |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2086pF @ 800V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 18V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | ACEPACK DMT-32 |
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