ADP480120W3-L
MOSFET 6N-CH 1200V 488A ACEPACKManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics ECOPACK® ADP480120W3-L is a 6 N-channel Silicon Carbide (SiC) MOSFET array designed for high-power applications. This device features a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 488A at 25°C (Tj). The Rds On is specified at a maximum of 2.6mOhm at 480A and 18V. With a high junction temperature (Tj) capability and a maximum power dissipation of 869W (Tj), it is suitable for demanding environments. The input capacitance (Ciss) is 37420pF at 800V, and the gate charge (Qg) is 1258nC at 18V. This chassis-mount module operates across a temperature range of -40°C to 175°C (Tj). The STMicroelectronics ADP480120W3-L is utilized in industries such as electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: ECOPACK®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 869W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 488A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 37420pF @ 800V |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 480A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 1258nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 50mA |
| Supplier Device Package | ACEPACK |
| Grade | - |
| Qualification | - |
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