ADP360120W3
SIC 6N-CH 1200V 379A ACEPACKManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics Silicon Carbide (SiC) FET Module, Part Number ADP360120W3, features a 6 N-Channel configuration with a 1200V (1.2kV) drain-to-source voltage. This chassis mount module offers a continuous drain current of 379A (Tj) and a maximum power dissipation of 704W (Tj). Key electrical parameters include a low on-resistance of 3.45mOhm @ 360A, 18V and a gate charge of 944nC @ 18V. Input capacitance (Ciss) is rated at 28070pF @ 800V, with a threshold voltage (Vgs(th)) of 4.4V @ 40mA. Operating temperature ranges from -40°C to 175°C (TJ). The ADP360120W3 is suitable for high-power applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems. It is supplied in an ACEPACK module package, with packaging in trays.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 704W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 379A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 28070pF @ 800V |
| Rds On (Max) @ Id, Vgs | 3.45mOhm @ 360A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 944nC @ 18V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.4V @ 40mA |
| Supplier Device Package | ACEPACK |
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