A2U8M12W3-FC
MOSFET 4N-CH 750V/1.2KV 180AManufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
Quality Control: Learn More
STMicroelectronics A2U8M12W3-FC is a 4-channel N-channel Silicon Carbide (SiC) MOSFET array designed for demanding power applications. This ECOPACK® series component offers a continuous drain current of 180A and 140A (chassis mount) at 25°C, with drain-to-source voltages of 750V and 1.2kV. Key electrical parameters include low on-resistance of 8mOhm and 12.5mOhm at 100A, 18V, and gate charge (Qg) of 288nC and 304nC. Input capacitance (Ciss) is specified at 7660pF and 7370pF. The device features a chassis mount configuration and operates within a junction temperature range of -55°C to 150°C. This SiC MOSFET array is suitable for applications in electric vehicles, industrial motor drives, and renewable energy systems.
Additional Information
Series: ECOPACK®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Three Level Inverter) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 750V, 1.2kV |
| Current - Continuous Drain (Id) @ 25°C | 180A, 140A |
| Input Capacitance (Ciss) (Max) @ Vds | 7660pF @ 400V, 7370pF @ 800V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 288nC @ 18V, 304nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.2V @ 2mA, 4V @ 2mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
Request a Quote
Clients Also Buy
STPS1170AF
DIODE SCHOTTKY 170V 1A SMAFLAT
STPS4S200B-TR
DIODE SCHOTTKY 200V 4A DPAK
STPSC20H12CWL
DIODE ARR SIC 1200V 25A TO247-3
