A1F25M12W2-F1
SIC 4N-CH 1200V 50A ACEPACK1Manufacturer: STMicroelectronics
Categories: FET, MOSFET Arrays
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STMicroelectronics A1F25M12W2-F1 is a Silicon Carbide (SiC) MOSFET array featuring four N-channel discrete devices. This module offers a Drain-Source Voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 50A at 25°C. The on-resistance (Rds On) is specified at a maximum of 34mOhm at 50A and 18V. Key parameters include a gate charge (Qg) of 147nC (max) at 18V and input capacitance (Ciss) of 3500pF (max) at 800V. The threshold voltage (Vgs(th)) is a maximum of 4.9V at 5mA. This component is designed for chassis mounting and operates at a maximum junction temperature (TJ) of 175°C. The supplier device package is ACEPACK 1. This high-performance SiC MOSFET array is suited for applications in power conversion and electric vehicles.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel |
| Operating Temperature | 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 800V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 147nC @ 18V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.9V @ 5mA |
| Supplier Device Package | ACEPACK 1 |
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