STPSC8H065CT
DIODE ARR SIC SCHOTT 650V TO220Manufacturer: STMicroelectronics
Categories: Diode Arrays
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STMicroelectronics STPSC8H065CT is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, packaged in a TO-220-3, offers a maximum DC reverse voltage of 650V and an average rectified current of 4A per diode. The forward voltage drop at 4A is 1.75V, with a low reverse leakage current of 40 µA at 650V. Notably, this SiC Schottky diode exhibits zero reverse recovery time, contributing to high-efficiency switching. It is designed for operation across a junction temperature range of -40°C to 175°C. This device is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies where high efficiency and fast switching are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 4A |
| Supplier Device Package | TO-220 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |