STPSC20H065CW
DIODE ARR SIC SCHOT 650V TO247Manufacturer: STMicroelectronics
Categories: Diode Arrays
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STMicroelectronics STPSC20H065CW is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 650V and an average rectified forward current of 10A per diode. Its forward voltage drop is specified at 1.75V at 10A, with a minimal reverse leakage of 100 µA at 650V. Notably, this SiC Schottky diode exhibits zero reverse recovery time above 500mA, making it suitable for high-frequency switching applications. The STPSC20H065CW is engineered for demanding power electronics systems, including industrial power supplies, solar inverters, and electric vehicle charging infrastructure. It operates efficiently across a junction temperature range of -40°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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