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STPSC12H065CT

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STPSC12H065CT

DIODE ARR SIC SCHOTT 650V TO220

Manufacturer: STMicroelectronics

Categories: Diode Arrays

Quality Control: Learn More

STMicroelectronics STPSC12H065CT is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This robust component offers a 650 V reverse voltage rating and a 6 A average rectified current per diode. Its low forward voltage drop of 1.75 V at 6 A, coupled with a reverse leakage of 60 µA at 650 V, contributes to enhanced system efficiency. Designed for through-hole mounting in a TO-220-3 package, it operates across a junction temperature range of -40°C to 175°C. The STPSC12H065CT is suitable for applications requiring high-speed switching and reduced switching losses, commonly found in power factor correction, industrial power supplies, and electric vehicle charging infrastructure.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologySiC (Silicon Carbide) Schottky
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)6A
Supplier Device PackageTO-220
Operating Temperature - Junction-40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.75 V @ 6 A
Current - Reverse Leakage @ Vr60 µA @ 650 V

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