STPSC12H065CT
DIODE ARR SIC SCHOTT 650V TO220Manufacturer: STMicroelectronics
Categories: Diode Arrays
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STMicroelectronics STPSC12H065CT is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This robust component offers a 650 V reverse voltage rating and a 6 A average rectified current per diode. Its low forward voltage drop of 1.75 V at 6 A, coupled with a reverse leakage of 60 µA at 650 V, contributes to enhanced system efficiency. Designed for through-hole mounting in a TO-220-3 package, it operates across a junction temperature range of -40°C to 175°C. The STPSC12H065CT is suitable for applications requiring high-speed switching and reduced switching losses, commonly found in power factor correction, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 6A |
| Supplier Device Package | TO-220 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 6 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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