BYW51G-200-TR
DIODE ARRAY GP 200V 10A D2PAKManufacturer: STMicroelectronics
Categories: Diode Arrays
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STMicroelectronics BYW51G-200-TR is a high-speed diode array featuring a common cathode configuration. This device offers a repetitive peak reverse voltage of 200V and a continuous average forward current of 10A per diode. The forward voltage drop is a maximum of 850mV at 8A, with a reverse leakage current of 15µA at 200V. With a reverse recovery time of 35ns, this diode array is suitable for applications requiring fast switching characteristics. The BYW51G-200-TR is housed in a TO-263-3, D2PAK package, facilitating surface mounting. Its robust construction and performance parameters make it a reliable component for industrial power supplies, automotive electronics, and general-purpose rectification where high efficiency and speed are critical. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 15 µA @ 200 V |
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