STD845DN40
TRANS 2NPN 400V 4A 8DIPManufacturer: STMicroelectronics
Categories: Bipolar Transistor Arrays
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STMicroelectronics' STD845DN40 is a dual NPN bipolar junction transistor (BJT) array packaged in an 8-DIP through-hole configuration. This component is rated for a maximum collector-emitter breakdown voltage of 400V and can handle a continuous collector current (Ic) of up to 4A. The device exhibits a minimum DC current gain (hFE) of 12 at 2A collector current and 5V collector-emitter voltage. With a maximum collector saturation voltage (Vce(sat)) of 500mV at 1A base current and 4A collector current, it is suitable for applications requiring efficient switching. The maximum power dissipation is 3W, and it operates reliably at junction temperatures up to 150°C. This component finds application in power supply, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1A, 4A |
| Current - Collector Cutoff (Max) | 250µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | 8-DIP |