SD1275
RF TRANS NPN 16V M135Manufacturer: STMicroelectronics
Categories: Bipolar RF Transistors
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STMicroelectronics SD1275 is an NPN bipolar RF power transistor designed for high-power applications. This device offers a collector current (Ic) capability of up to 8A and a maximum power dissipation of 70W. It features a minimum DC current gain (hFE) of 20 at 250mA and 5V. The transistor is rated for a collector emitter breakdown voltage (Vceo) of 16V and operates across a broad temperature range, with a junction temperature (TJ) up to 200°C. The SD1275 is presented in an M135 package, suitable for chassis or stud mounting configurations. Its robust design and performance characteristics make it suitable for use in broadcast, industrial, and telecommunications equipment requiring efficient RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | M135 |
| Mounting Type | Chassis, Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB |
| Power - Max | 70W |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 250mA, 5V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M135 |
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