S2M0025120J
MOSFET SILICON CARBIDE SIC 1200VManufacturer: SMC Diode Solutions
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 70A (Tj) 311W (Tc) Surface Mount TO-263-7
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tj) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 311W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Supplier Device Package | TO-263-7 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 177 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 1000 V |
| Qualification | - |
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