LPT16ED
RF TRANS NPN 4V 16GHZ DIEManufacturer: Skyworks Solutions Inc.
Categories: Bipolar RF Transistors
Quality Control: Learn More
Skyworks Solutions Inc. LPT16ED is an NPN bipolar RF transistor designed for high-frequency applications. This die-packaged component offers a collector-emitter breakdown voltage of 4V and a maximum collector current of 80mA. It features a transition frequency of 16GHz and a typical power output of 250mW. The DC current gain (hFE) is a minimum of 50 at 20mA and 2V, with a gain of 5.2dB. Operating at junction temperatures up to 150°C, the LPT16ED is suitable for demanding RF front-end circuitry in wireless infrastructure and satellite communications. The device is supplied in a tray.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 5.2dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 4V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 2V |
| Frequency - Transition | 16GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | Die |