PT4800
SENSOR PHOTO 800NM SIDE VIEW RADManufacturer: Sharp Microelectronics
Categories: Phototransistors
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Sharp Microelectronics PT4800 phototransistor, designed for 800nm infrared detection. This radial-leaded component offers a collector current (Ic) of up to 20 mA and a maximum collector-emitter breakdown voltage (VCEO) of 35V. Featuring a low dark current (Id) of 100 nA, it ensures reliable performance in ambient light conditions. The PT4800 operates within a temperature range of -25°C to 85°C and has a maximum power dissipation of 75 mW. Its side-view orientation and 70° viewing angle make it suitable for applications requiring focused light detection. This through-hole device, supplied in tube packaging, finds utility in various industrial automation, optical sensing, and control systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Radial |
| Wavelength | 800nm |
| Mounting Type | Through Hole |
| Orientation | Side View |
| Operating Temperature | -25°C ~ 85°C |
| Viewing Angle | 70° |
| Current - Dark (Id) (Max) | 100 nA |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
| Power - Max | 75 mW |
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