GPI040A060MN-FD
IGBT 600V 80A 231W TO3PNManufacturer: SemiQ
Categories: Single IGBTs
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SemiQ GPI040A060MN-FD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a maximum collector-emitter voltage of 600 V. This device offers a continuous collector current of 80 A and a pulsed collector current of 120 A. It features a low on-state voltage (Vce(on)) of 2.3 V at 15 V gate-emitter voltage and 40 A collector current, with a maximum power dissipation of 231 W. The switching characteristics include typical turn-on delay (Td(on)) of 35 ns and turn-off delay (Td(off)) of 85 ns at 25°C, with a reverse recovery time (trr) of 60 ns. The gate charge is 173 nC, and switching energy is rated at 1.46 mJ (on) and 540 µJ (off) under test conditions of 400 V, 40 A, 5 Ohm, and 15 V. The SemiQ GPI040A060MN-FD is housed in a TO-3PN package, suitable for through-hole mounting. This component is commonly utilized in power conversion applications across industrial, automotive, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 35ns/85ns |
| Switching Energy | 1.46mJ (on), 540µJ (off) |
| Test Condition | 400V, 40A, 5Ohm, 15V |
| Gate Charge | 173 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 231 W |
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