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GPA060A060MN-FD

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GPA060A060MN-FD

IGBT 600V 120A 347W TO3PN

Manufacturer: SemiQ

Categories: Single IGBTs

Quality Control: Learn More

SemiQ GPA060A060MN-FD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 120 A, with a pulsed collector current of 180 A. The device dissipates a maximum power of 347 W and exhibits a Vce(on) of 2.3 V at 15 V gate-source voltage and 60 A collector current. Key switching characteristics include a typical turn-on delay of 45 ns and turn-off delay of 150 ns at 25°C, with a reverse recovery time of 140 ns. Switching energy is specified at 2.66 mJ (on) and 1.53 mJ (off) under test conditions of 400 V, 60 A, 10 Ohm, and 15 V gate drive. The GPA060A060MN-FD is housed in a TO-3PN package for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This component is utilized in power factor correction, motor drives, and industrial power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)140 ns
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 60A
Supplier Device PackageTO-3PN
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C45ns/150ns
Switching Energy2.66mJ (on), 1.53mJ (off)
Test Condition400V, 60A, 10Ohm, 15V
Gate Charge225 nC
Current - Collector (Ic) (Max)120 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)180 A
Power - Max347 W

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