GPA040A120L-ND
IGBT 1200V 80A 455W TO264Manufacturer: SemiQ
Categories: Single IGBTs
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The SemiQ GPA040A120L-ND is a high-performance NPT and Trench IGBT designed for demanding power applications. This component offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed capability of 120A. Dissipating up to 455W, it features a low on-state voltage of 2.8V at 15V gate-emitter and 40A collector current. Key dynamic parameters include a gate charge of 510 nC and switching times of 41ns turn-on and 200ns turn-off at 25°C, with switching energy specified at 5.8mJ (on) and 1.5mJ (off) under test conditions of 600V, 40A, 5 Ohm, and 15V. The device operates across a wide temperature range from -55°C to 150°C and is housed in a TO-264 package for through-hole mounting. This IGBT is suitable for use in industrial motor drives, power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 220 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 40A |
| Supplier Device Package | TO-264 |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | 41ns/200ns |
| Switching Energy | 5.8mJ (on), 1.5mJ (off) |
| Test Condition | 600V, 40A, 5Ohm, 15V |
| Gate Charge | 510 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 455 W |
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