GPA040A120L-FD
IGBT 1200V 80A 480W TO264Manufacturer: SemiQ
Categories: Single IGBTs
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The SemiQ GPA040A120L-FD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 80A, with a pulsed current rating (Icm) of 120A. With a maximum power dissipation of 480W and a low on-state voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 40A collector current, it offers efficient power handling. Key switching parameters include a typical gate charge of 480 nC, switching times (Td(on)/Td(off)) of 55ns/200ns at 25°C, and switching energy values of 5.3mJ (on) and 1.1mJ (off) under test conditions of 600V, 40A, 5 Ohm, and 15V. The GPA040A120L-FD is housed in a TO-264 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This device finds application in power conversion systems across industries such as industrial automation and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Supplier Device Package | TO-264 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 55ns/200ns |
| Switching Energy | 5.3mJ (on), 1.1mJ (off) |
| Test Condition | 600V, 40A, 5Ohm, 15V |
| Gate Charge | 480 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 480 W |
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