GPA030A135MN-FDR
IGBT 1350V 60A 329W TO3PNManufacturer: SemiQ
Categories: Single IGBTs
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The SemiQ GPA030A135MN-FDR is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a maximum collector-emitter voltage of 1350 V and a continuous collector current of 60 A, with a pulsed capability of 90 A. It offers a maximum power dissipation of 329 W and a low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 30 A collector current. Switching characteristics include typical turn-on delay of 30 ns and turn-off delay of 145 ns at 25°C, with a switching energy of 4.4 mJ (on) and 1.18 mJ (off). The device operates within a temperature range of -55°C to 150°C and is provided in a TO-3PN package suitable for through-hole mounting. This IGBT is commonly employed in power factor correction, industrial motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 450 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 30ns/145ns |
| Switching Energy | 4.4mJ (on), 1.18mJ (off) |
| Test Condition | 600V, 30A, 5Ohm, 15V |
| Gate Charge | 300 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 329 W |
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