GPA020A135MN-FD
IGBT 1350V 40A 223W TO3PNManufacturer: SemiQ
Categories: Single IGBTs
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SemiQ GPA020A135MN-FD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for robust power applications. This component features a collector-emitter breakdown voltage of 1350V and a continuous collector current (Ic) rating of 40A, with a pulsed capability of 60A. The device offers a maximum power dissipation of 223W and a low on-state voltage (Vce(on)) of 2.3V at 15V gate-source voltage and 20A collector current. Key switching characteristics include a gate charge of 180 nC, typical turn-on delay (Td(on)) of 25ns, and turn-off delay (Td(off)) of 175ns at 25°C. The reverse recovery time (trr) is specified at 425ns. Packaged in a TO-3PN (TO-3P-3, SC-65-3) through-hole configuration, this IGBT is suitable for industrial power conversion, motor drives, and renewable energy systems. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 425 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 20A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 25ns/175ns |
| Switching Energy | 2.5mJ (on), 760µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 180 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 223 W |
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