GPA015A120MN-ND
IGBT 1200V 30A 212W TO3PNManufacturer: SemiQ
Categories: Single IGBTs
Quality Control: Learn More
SemiQ NPT and Trench IGBT, part number GPA015A120MN-ND, offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 30A. This through-hole component, packaged in a TO-3PN (TO-3P-3, SC-65-3), dissipates a maximum power of 212W. Key parameters include a gate charge of 210 nC and switching energy of 1.61mJ (on) and 530µJ (off) under test conditions of 600V, 15A, and 10 Ohm. The on-state voltage drop is a maximum of 2.5V at 15V Vge and 15A Ic. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 320 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | TO-3PN |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | 25ns/166ns |
| Switching Energy | 1.61mJ (on), 530µJ (off) |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Gate Charge | 210 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 212 W |
Request a Quote
Clients Also Buy
GPA042A100L-ND
IGBT 1000V 60A 463W TO264
GPA030A135MN-FDR
IGBT 1350V 60A 329W TO3PN
GPA040A120L-FD
IGBT 1200V 80A 480W TO264
