GP2T080A120U
SIC MOSFET 1200V 80M TO-247-3LManufacturer: SemiQ
Categories: Single FETs, MOSFETs
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The SemiQ GP2T080A120U is a 1200V N-channel Silicon Carbide (SiC) MOSFET designed for high-performance applications. This through-hole component features a low on-resistance of 100mOhm maximum at 20A and 20V Vgs, with a continuous drain current of 35A at 25°C. Its SiC technology enables a maximum power dissipation of 188W and an operating temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge of 58 nC (max) at 20V Vgs and an input capacitance of 1377 pF (max) at 1000V Vds. The GP2T080A120U is suitable for demanding power conversion systems in industries such as industrial power supplies, electric vehicle charging, and renewable energy. The device is supplied in a TO-247-3 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1377 pF @ 1000 V |
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