GP2T080A120H
SIC MOSFET 1200V 80M TO-247-4LManufacturer: SemiQ
Categories: Single FETs, MOSFETs
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The SemiQ GP2T080A120H is a 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance power applications. This device offers a low on-resistance of 100mOhm at 20A and 20V Vgs, with a continuous drain current rating of 35A (Tc) and maximum power dissipation of 188W (Tc). It features a drain-source breakdown voltage (Vdss) of 1200V and a gate-source voltage range of +25V to -10V. Key parameters include a maximum gate charge (Qg) of 61 nC at 20V and input capacitance (Ciss) of 1377 pF at 1000V. Operating across an industrial temperature range of -55°C to 175°C (TJ), the GP2T080A120H is housed in a TO-247-4 package, suitable for through-hole mounting. This SiCFET technology is commonly utilized in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1377 pF @ 1000 V |
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