GP2T040A120U
SIC MOSFET 1200V 40M TO-247-3LManufacturer: SemiQ
Categories: Single FETs, MOSFETs
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SemiQ GP2T040A120U is an N-Channel Silicon Carbide (SiC) FET with a drain-source voltage (Vdss) of 1200V. This device offers a continuous drain current capability of 63A at 25°C (Tc) and a maximum power dissipation of 322W (Tc). The Rds On specification is a maximum of 52mOhm at 40A and 20V gate-source voltage. Featuring a gate charge of 118 nC and input capacitance of 3192 pF, the GP2T040A120U operates with a maximum gate-source voltage of +25V and -10V. Its through-hole mounting style utilizes the TO-247-3 package. This component is suitable for applications in electric vehicles, industrial power supplies, and renewable energy systems. It is supplied in Tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 322W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3192 pF @ 1000 V |
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