GP2T040A120H
SIC MOSFET 1200V 40M TO-247-4LManufacturer: SemiQ
Categories: Single FETs, MOSFETs
Quality Control: Learn More
SemiQ N-Channel SICFET, part number GP2T040A120H, offers a 1200V drain-source voltage and a continuous drain current of 63A at 25°C (Tc). This through-hole component features a maximum on-resistance of 52mOhm at 40A and 20V. With a gate charge of 118 nC at 20V and input capacitance of 3192 pF at 1000V, the GP2T040A120H is designed for high-performance applications. It has a maximum power dissipation of 322W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). The TO-247-4 package is suitable for demanding power conversion systems across industries such as industrial power supplies, electric vehicle charging, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 322W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3192 pF @ 1000 V |
Request a Quote
Clients Also Buy
GCMS080B120S1-E1
SIC 1200V 80M MOSFET & 10A SBD S
GCMS040B120S1-E1
SIC 1200V 40M MOSFET & 15A SBD S
GCMX080B120S1-E1
SIC 1200V 80M MOSFET SOT-227
