GCMX080B120S1-E1
SIC 1200V 80M MOSFET SOT-227Manufacturer: SemiQ
Categories: Single FETs, MOSFETs
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SemiQ GCMX080B120S1-E1 is a 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance power applications. This component features a low on-resistance of 100mOhm at 20A and 20V gate drive, enabling efficient power conversion. With a continuous drain current capability of 30A (Tc) and a maximum power dissipation of 142W (Tc), it is well-suited for demanding thermal environments. The device offers a drain-source voltage (Vdss) of 1200V and a gate-source voltage (Vgs) range of +25V/-10V. Key electrical characteristics include a gate charge (Qg) of 58 nC (max) at 20V and input capacitance (Ciss) of 1336 pF (max) at 1000V. The GCMX080B120S1-E1 is housed in a SOT-227-4 miniBLOC package for chassis mounting, ensuring robust thermal management. This SiC MOSFET is utilized in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 142W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1336 pF @ 1000 V |
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