GCMX040B120S1-E1
SIC 1200V 40M MOSFET SOT-227Manufacturer: SemiQ
Categories: Single FETs, MOSFETs
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SemiQ GCMX040B120S1-E1 features a 1200V N-Channel Silicon Carbide MOSFET housed in a SOT-227 package. This device offers a continuous drain current of 57A (Tc) and a maximum power dissipation of 242W (Tc), with a low on-resistance of 52mOhm @ 40A, 20V. Key parameters include a gate charge of 121 nC @ 20 V and input capacitance of 3185 pF @ 1000 V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 242W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3185 pF @ 1000 V |
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