GCMS020B120S1-E1
SIC 1200V 20M MOSFET & 50A SBD SManufacturer: SemiQ
Categories: Single FETs, MOSFETs
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The SemiQ GCMS020B120S1-E1 is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-voltage, high-efficiency power applications. Featuring a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 113 A at 25°C (Tc), this device offers a low on-resistance (Rds On) of 28 mOhm at 50 A and 20 V. Its robust design includes a maximum power dissipation of 395 W (Tc) and operates across a junction temperature range of -55°C to 175°C. The GCMS020B120S1-E1 is housed in a SOT-227-4, miniBLOC package suitable for chassis mounting, facilitating efficient thermal management. Key electrical parameters include an input capacitance (Ciss) of 5279 pF at 1000 V and a gate charge (Qg) of 215 nC at 20 V. This component is utilized in demanding sectors such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 113A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 395W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Supplier Device Package | SOT-227 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5279 pF @ 1000 V |
| Qualification | - |
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