GP3D050A120B
DIODE SIL CARB 1.2KV 50A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP3D050A120B is a Silicon Carbide Schottky diode designed for demanding power applications. This component features a 1200V reverse voltage (Vr) rating and a 50A average rectified current (Io) capability. Its low forward voltage drop (Vf) of 1.7V at 50A and zero reverse recovery time (trr) contribute to high efficiency. The GP3D050A120B operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247-2 through-hole package. Typical applications include power factor correction, inverters, and electric vehicle charging systems. The device exhibits a reverse leakage current of 100 µA at 1200V and a capacitance of 3040pF at 1V and 1MHz.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 3040pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 50 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |