GP3D050A065B
DIODE SIL CARB 650V 135A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ Amp+™ GP3D050A065B is a Silicon Carbide (SiC) Schottky diode designed for high-performance power applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage of 650 V and an average rectified forward current (Io) of 135 A. The forward voltage drop (Vf) is rated at a maximum of 1.6 V at 50 A. Featuring a junction operating temperature range of -55°C to 175°C, this diode exhibits minimal reverse leakage of 125 µA at its maximum reverse voltage. Its capacitance at 1V and 1MHz is 1946pF. The GP3D050A065B is suitable for demanding applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1946pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 135A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 50 A |
| Current - Reverse Leakage @ Vr | 125 µA @ 650 V |
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