GP3D030A120B
DIODE SIL CARB 1.2KV 30A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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SemiQ Amp+™ GP3D030A120B is a Silicon Carbide (SiC) Schottky diode designed for robust power applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage of 1200V and an average rectified forward current capability of 30A. The forward voltage drop is a nominal 1.7V at 30A. Featuring an exceptionally low reverse leakage of 60 µA at its maximum rated reverse voltage and a zero reverse recovery time, this diode minimizes switching losses and enhances efficiency, particularly in high-frequency power conversion. Its operating junction temperature range is -55°C to 175°C, ensuring reliability in demanding environments. This device is suitable for use in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1762pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
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