GP3D030A065B
DIODE SIL CARB 650V 30A TO247-2Manufacturer: SemiQ
Categories: Single Diodes
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The SemiQ Amp+™ GP3D030A065B is a 650V, 30A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-2 package, offers superior performance characteristics for demanding applications. It features a maximum forward voltage (Vf) of 1.65V at 30A and a low reverse leakage current of 75 µA at 650V. The device exhibits no significant reverse recovery time (trr) above 500mA, contributing to its high-efficiency operation. With an operating junction temperature range of -55°C to 175°C, this diode is well-suited for power conversion systems in electric vehicles, industrial power supplies, and renewable energy infrastructure. The capacitance at 1V and 1MHz is rated at 1247pF.
Additional Information
Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1247pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 30 A |
| Current - Reverse Leakage @ Vr | 75 µA @ 650 V |
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