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GP3D030A065B

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GP3D030A065B

DIODE SIL CARB 650V 30A TO247-2

Manufacturer: SemiQ

Categories: Single Diodes

Quality Control: Learn More

The SemiQ Amp+™ GP3D030A065B is a 650V, 30A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-2 package, offers superior performance characteristics for demanding applications. It features a maximum forward voltage (Vf) of 1.65V at 30A and a low reverse leakage current of 75 µA at 650V. The device exhibits no significant reverse recovery time (trr) above 500mA, contributing to its high-efficiency operation. With an operating junction temperature range of -55°C to 175°C, this diode is well-suited for power conversion systems in electric vehicles, industrial power supplies, and renewable energy infrastructure. The capacitance at 1V and 1MHz is rated at 1247pF.

Additional Information

Series: Amp+™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F1247pF @ 1V, 1MHz
Current - Average Rectified (Io)30A
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.65 V @ 30 A
Current - Reverse Leakage @ Vr75 µA @ 650 V

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